(5PCS) SI7110DN-T1-E3 VISHAY MOSFET N-CH 20V 13.5A 1212-8

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THIS LISTING IS FOR (5PCS) OF SI7110DN-T1-E3 BY VISHAY

SPECIFICATIONS

Mfr Package Description ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
REACH Compliant Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 61.0  mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 13.5  A
Drain Current-Max (ID) 13.5  A
Drain-source On Resistance-Max 0.0053  ohm
DS Breakdown Voltage-Min 20.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1.0
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.8  W
Pulsed Drain Current-Max (IDM) 60.0  A
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON