(5PCS) IXTY01N100D MOSFET N-CH 1000V 0.1A TO-252AA

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THIS LISTING IS FOR (5PCS) OF IXTY01N100D BY IXYS

SPECIFICATIONS

Mfr Package Description TO-252AA, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 110.0 ohm
DS Breakdown Voltage-Min 1000.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1.0
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25.0 W
Pulsed Drain Current-Max (IDM) 0.4 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish PURE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON