(5PCS) IRFD9113 Harris MOSFET P-CH 60V 600MA 4-DIP
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This listing is for (5pcs) of IRFD9113 by Harris
Status Transferred
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 0.6 A
Drain Current-Max (ID) 0.6 A
Drain-source On Resistance-Max 1.6 ohm
DS Breakdown Voltage-Min 80.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.0 W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON