(5PC) IRF640FI FET TRANSISTOR 10A, 200V, 0.18ohm, 1-Element, N-CHANNEL, TO-220AB
Tax included.
THIS LISTING IS FOR (5PC) OF IRF640FI BY STMICRO
FET TRANSISTOR 10A, 200V, 0.18ohm, 1-Element, N-CHANNEL, TO-220AB
Part #: IRF640FI
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: Power Field-Effect Transistor, 10A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mfr Package Description TO-220, 3 PIN
Status Discontinued
Avalanche Energy Rating (Eas) 50.0 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 10.0 A
Drain Current-Max (ID) 10.0 A
Drain-source On Resistance-Max 0.18 ohm
DS Breakdown Voltage-Min 200.0 V
Feedback Cap-Max (Crss) 150.0 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40.0 W
Power Dissipation-Max (Abs) 40.0 W
Pulsed Drain Current-Max (IDM) 72.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 190.0 ns
Turn-on Time-Max (ton) 185.0 ns
Additional Feature AVALANCHE RATED