5961-01-128-3316(SM-C-875392) USAC SEMICONDUCTOR DEVICE CERAMIC GOLD PLATE

COMPONENT NAME AND QUANTITY 4 TRANSISTOR

SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR

CURRENT RATING PER CHARACTERISTIC 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR

POWER RATING PER CHARACTERISTIC 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION

INCLOSURE MATERIAL PLASTIC

MOUNTING METHOD PRESS FIT

TERMINAL TYPE AND QUANTITY 14 RIBBON

OVERALL LENGTH 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM

OVERALL HEIGHT 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM

OVERALL WIDTH 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM

FEATURES PROVIDED BURN IN AND HERMETICALLY SEALED CASE

SPECIAL FEATURES ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP