(500 PCS) IRF610A SAM 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

(500 PCS) IRF610A SAM 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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THIS LISTING IS FOR (500 PCS) OF IRF610A BY SAMSUNG
(PICTURE SHOWS (6 PCS) BUT LISTING IS FOR (500 PCS)
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part #: IRF610A

Part Category: Transistors
Manufacturer: Samsung Semiconductor Division
Description: 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description

TO-220, 3 PIN
Status Transferred
Avalanche Energy Rating (Eas) 44.0 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 3.3 A
Drain Current-Max (ID) 3.3 A
Drain-source On Resistance-Max 1.5 ohm
DS Breakdown Voltage-Min 200.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38.0 W
Pulsed Drain Current-Max (IDM) 10.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON



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