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(50 PCS) STP7NB30FP STMICRO Power Field-Effect Transistor 4A 300V TO-220AB
(50 PCS) STP7NB30FP STMICRO Power Field-Effect Transistor 4A 300V TO-220AB
(50 PCS) STP7NB30FP STMICRO Power Field-Effect Transistor 4A 300V TO-220AB

(50 PCS) STP7NB30FP STMICRO Power Field-Effect Transistor 4A 300V TO-220AB

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THIS IS FOR (50PCS) OF STP7NB30FP BY STMICRO 
Power Field-Effect Transistor 4A 300V TO-220AB

Part #: STP7NB30FP
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: Power Field-Effect Transistor, 4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mfr Package Description TO-220FP, 3 PIN
Status Discontinued
Avalanche Energy Rating (Eas) 150.0  mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 7.0  A
Drain Current-Max (ID) 4.0  A
Drain-source On Resistance-Max 0.9  ohm
DS Breakdown Voltage-Min 300.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 85.0  W
Pulsed Drain Current-Max (IDM) 28.0  A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON