(5 PCS) SSS7N60A SAMSUNG Trans MOSFET N-CH 600V 4A TO220F
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THIS LISTING IS FOR (5 PCS) OF SSS7N60A BY SAMSUNG
Trans MOSFET N-CH 600V 4A TO220F
Part #: SSS7N60A
Part Category: Transistors
Manufacturer: Samsung Semiconductor Division
Description: Power Field-Effect Transistor, 4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mfr Package Description TO-220F, 3 PIN
Status Transferred
Avalanche Energy Rating (Eas) 611.0 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 4.0 A
Drain Current-Max (ID) 4.0 A
Drain-source On Resistance-Max 1.2 ohm
DS Breakdown Voltage-Min 600.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48.0 W
Pulsed Drain Current-Max (IDM) 16.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON