(5 PCS) SI4599DY-T1-GE3 VISHAY MOSFET N/P-CH 40V 6.8A 8SOIC ROHS

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THIS IS FOR (5 PCS) OF SI4599DY-T1-GE3 BY VISHAY

MOSFET N/P-CH 40V 6.8A 8SOIC ROHS

Manufacturer: Vishay

Product Category: MOSFETs

RoHS: YES

Technology: Si

Mounting Style: SMD/SMT

Package / Case: SOIC-8

Transistor Polarity: N-Channel, P-Channel

Number of Channels: 2 Channel

Vds - Drain-Source Breakdown Voltage: 40 V

Id - Continuous Drain Current: 5.8 A, 6.8 A

Rds On - Drain-Source Resistance: 35.5 mOhms, 45 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V, 1.4 V

Qg - Gate Charge: 11.7 nC, 25 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 3 W, 3.1 W

Channel Mode: Enhancement

Tradename: TrenchFET

Packaging: Reel

Packaging: Cut Tape

Brand: Vishay Semiconductors

Configuration: Dual

Fall Time: 9 ns, 9 ns

Forward Transconductance - Min: 14 S, 22 S

Height: 1.75 mm

Length: 4.9 mm

Product Type: MOSFETs

Rise Time: 10 ns, 12 ns

Series: SI4

Subcategory: Transistors

Transistor Type: 1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time: 15 ns, 30 ns

Typical Turn-On Delay Time: 7 ns, 7 ns

Width: 3.9 mm

Part # Aliases: SI4599DY-GE3