( 5 PCS) P4C187-20PC PERFORMANCE SEMI ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS

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THIS LISTING IS FOR (5 PCS) OF P4C187-20PC BY PERFORMANCE SEMI
HIGH SPEED 64K x 1 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 ns (Industrial)
– 15/20/25/35/45 ns (Military)
Low Power Operation
– 743 mW Active -10
– 660/770 mW Active for -12/15
– 550/660 mW Active for -20/25 /35
– 193/220 mW Standby (TTL Input)
– 83/110 mW Standby (CMOS Input) P4C187
– 5.5 mW Standby (CMOS Input) P4C187L (Military)
Single 5V±10% Power Supply

Means Quality, Service and Speed
Data Retention with 2.0V Supply (P4C187L Military)
Separate Data I/O
Three-State Output
TTL Compatible Output
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 22-Pin 300 mil DIP
– 24-Pin 300 mil SOJ
– 22-Pin 290x490 mil LCC
DESCRIPTION
The P4C187/L are 65, 536-bit ultra high speed static RAMs
organized as 64K x 1. The CMOS memories require no
clocks or refreshing and have equal access and cycle times.
The RAMs operate from a single 5V ± 10% tolerance power
supply. Data integrity is maintained for supply voltages down
to 2.0V, typically drawing 10mA.
Access times as fast as 10 nanoseconds are available,
greatly enhancing system speeds. CMOS reduces power
consumption to a low 743mW active, 193/83mW standby
for TTL/CMOS inputs and only 5.5 mW standby for the
P4C187L.
The P4C187/L are available in 22-pin 300 mil DIP, 24-pin
300 mil SOJ, and 22-pin LCC packages providing excellent
board level densities.