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(5 PCS) IRF830 SAMSUNG Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220
(5 PCS) IRF830 SAMSUNG Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220
(5 PCS) IRF830 SAMSUNG Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220

(5 PCS) IRF830 SAMSUNG Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220

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THIS LISTING IS FOR (5 PCS) OF IRF830 BY SAMSUNG
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220

Manufacturer: Samsung
Product Category: MOSFET
RoHS: No
Id - Continuous Drain Current: 4.5 A
Vds - Drain-Source Breakdown Voltage: 500 V
Rds On - Drain-Source Resistance: 1.5 Ohms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 74 W
Mounting Style: Through Hole
Package / Case: TO-220
Channel Mode: Enhancement
Configuration: Single
Fall Time: 16 ns
Minimum Operating Temperature: - 55 C
Rise Time: 16 ns
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 8.2 ns