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(5 PCS) IRF640N IR MOSFET N-CH 200V 18A TO-220AB
(5 PCS) IRF640N IR MOSFET N-CH 200V 18A TO-220AB
(5 PCS) IRF640N IR MOSFET N-CH 200V 18A TO-220AB
(5 PCS) IRF640N IR MOSFET N-CH 200V 18A TO-220AB

(5 PCS) IRF640N IR MOSFET N-CH 200V 18A TO-220AB

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THIS IS FOR (5 PCS) OF IRF640N BY IR
MOSFET N-CH 200V 18A TO-220AB

Manufacturer: Infineon/IR
Product Category: MOSFET
RoHS:  NO
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 150 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 44.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Fall Time: 5.5 ns
Forward Transconductance - Min: 6.8 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 19 ns
100
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Width: 4.4 mm
Part # Aliases: IRF640NPBF SP001570078
Unit Weight: 0.068784 oz