(4 PCS) KM416S4030BT-G10 SAMSUNG Synchronous DRAM, 4MX16, 7ns, CMOS, TSOP2-54
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THIS LISTING IS FOR (4 PCS) OF KM416S4030BT-G10 BY SAMSUNG
Synchronous DRAM, 4MX16, 7ns, CMOS, TSOP2-54
Part #: KM416S4030BT-G10
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54
Mfr Package Description 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Status Discontinued
Sub Category DRAMs
Access Mode FOUR BANK PAGE BURST
Access Time-Max 7.0 ns
Clock Frequency-Max (fCLK) 100.0 MHz
Interleaved Burst Length 1,2,4,8
I/O Type COMMON
JESD-30 Code R-PDSO-G54
JESD-609 Code e0
Memory Density 6.7108864E7 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304.0 words
Number of Words Code 4M
Operating Mode SYNCHRONOUS
Operating Temperature-Min 0.0 Cel
Operating Temperature-Max 70.0 Cel
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096.0
Seated Height-Max 1.2 mm
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 Amp
Supply Current-Max 0.12 Amp
Supply Voltage-Nom (Vsup) 3.3 V
Supply Voltage-Min (Vsup) 3.0 V
Supply Voltage-Max (Vsup) 3.6 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Length 22.22 mm
Width 10.16 mm
Additional Feature AUTO/SELF REFRESH