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(4 PCS) K4S641632H-UI75 SAMSUNG SDRAM 64Mb (4Mb x 16) 5.4ns CMOS TSOP54
(4 PCS) K4S641632H-UI75 SAMSUNG SDRAM 64Mb (4Mb x 16) 5.4ns CMOS TSOP54

(4 PCS) K4S641632H-UI75 SAMSUNG SDRAM 64Mb (4Mb x 16) 5.4ns CMOS TSOP54

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THIS LISTING IS FOR (4 PCS) OF K4S641632H-UI75 BY SAMSUNG
SDRAM 64Mb (4Mb x 16) 5.4ns CMOS TSOP54

Part #: K4S641632H-UC75
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54

Status Discontinued
Sub Category DRAMs
Access Time-Max 5.4  ns
Clock Frequency-Max (fCLK) 133.0  MHz
Interleaved Burst Length 1,2,4,8
I/O Type COMMON
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Memory Density 6.7108864E7  bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Terminals 54
Number of Words 4194304.0  words
Number of Words Code 4M
Operating Temperature-Min 0.0  Cel
Operating Temperature-Max 70.0  Cel
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096.0
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001  Amp
Supply Current-Max 0.135  Amp
Supply Voltage-Nom (Vsup) 3.3  V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8  mm
Terminal Position DUAL