(3) STW75N06 75A, 60V, 0.014ohm, N-CHANNEL, Si, POWER MOSFET TRANSISTOR TO-247

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THIS LISTING IS FOR (3) OF STW75N06 BY ST MICROELECTRONICS
75A, 60V, 0.014ohm, N-CHANNEL, Si, POWER MOSFET TRANSISTOR TO-247

Status Active-Unconfirmed
Avalanche Energy Rating (Eas) 900 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 75 A
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0140 ohm
DS Breakdown Voltage-Min 60 V
Feedback Cap-Max (Crss) 650 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 200 W
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 970 ns
Turn-on Time-Max (ton) 1570 ns
Additional Feature AVALANCHE RATED