(2PCS) K4T1G044QA-ZCCC Samsung DDR2 DRAM, 256MX4, 0.6ns, CMOS, PBGA68
Tax included.
This listing is for (2pcs) of K4T1G044QA-ZCCC by Samsung
Status Discontinued
Access Mode MULTI BANK PAGE BURST
Access Time-Max (ns) 0.6000000000000000
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (MHz) 200.00000
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B68
J-STD-609 Code e1
Length (mm) 18.0000
Memory Density (bits) 1073741824.0000000000000000
Memory IC Type DDR2 DRAM
Memory Width 4
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 68
Number of Words (words) 268435456.0000000000000000
Number of Words Code 256M
Operating Mode SYNCHRONOUS
Operating Temperature-Max (Cel) 85.0
Operating Temperature-Min (Cel) 0.0
Memory Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA68,9X19,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
DLA Qualification Not Qualified
Refresh Cycles 8192
Seated Height-Max (mm) 1.2000
Self Refresh YES
Sequential Burst Length 4,8
Supply Voltage-Max (V) 1.90000
Supply Voltage-Min (V) 1.70000
Supply Voltage-Nom (V) 1.8
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch (mm) 0.800
Terminal Position BOTTOM
Width (mm) 11.0000