(2PCS) IXTA3N120 MOSFET N-CH 1.2KV 3A TO-263
Tax included.
THIS LISTING IS FOR (2PCS) OF IXTA3N120 BY IXYS
SPECIFICATIONS
| Mfr Package Description | PLASTIC, TO-263, 3 PIN |
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Active |
| Avalanche Energy Rating (Eas) | 700.0 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 3.0 A |
| Drain-source On Resistance-Max | 4.5 ohm |
| DS Breakdown Voltage-Min | 1200.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1.0 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 12.0 A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | PURE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Additional Feature | AVALANCHE RATED |
