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(25 PCS) GT5J301 Toshiba Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP
(25 PCS) GT5J301 Toshiba Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP
(25 PCS) GT5J301 Toshiba Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP
(25 PCS) GT5J301 Toshiba Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP
(25 PCS) GT5J301 Toshiba Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP

(25 PCS) GT5J301 Toshiba Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP

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THIS LISTING IS FOR (25 PCS) OF GT5J301 BY Toshiba
Trans IGBT Chip N-CH 600V 5A 3-Pin(3+Tab) TO-220-3FP

Part #: GT5J301
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel

Mfr Package Description, 2-10R1C, 3 PIN
Status EOL
Case Connection ISOLATED
Collector Current-Max (IC) 5.0  A
Collector-emitter Voltage-Max 600.0  V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 300.0  ns
Gate-emitter Voltage-Max 20.0  V
JESD-30 Code R-PSFM-T3
Number of Elements 1.0
Number of Terminals 3
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 28.0  W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300.0  ns
Turn-on Time-Nom (ton) 400.0  ns
Additional Feature HIGH SPEED