(2) SUB85N02-03-E3 VISHAY Power Field-Effect Transistor 85A 20V 0.0038ohm TO-263

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THIS IS FOR (2 PCS) SUB85N02-03-E3 VISHAY Power Field-Effect Transistor 85A 20V 0.0038ohm TO-263

Part #: SUB85N02-03-E3

Obsolete

Part Category: Power Field-Effect Transistors

Manufacturer: VISHAY SILICONIX

Description: Power Field-Effect Transistor, 85A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Status Discontinued

Case Connection DRAIN

Configuration SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min (V) 20.0000000000000000

Drain Current-Max (ID) (A) 85.0000000000000000

Drain-source On Resistance-Max (ohm) 0.0038000000000000

FET Technology METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code TO-263AB

JESD-30 Code R-PSSO-G2

J-STD-609 Code e3

Moisture Sensitivity Level 1

Number of Elements 1

Number of Terminals 2

Operating Mode ENHANCEMENT MODE

Package Body Material PLASTIC/EPOXY

Package Shape RECTANGULAR

Package Style SMALL OUTLINE

Polarity/Channel Type N-CHANNEL

Pulsed Drain Current-Max (IDM) (A) 240.0000000000000000

DLA Qualification Not Qualified

Surface Mount YES

Terminal Finish MATTE TIN

Terminal Form GULL WING

Terminal Position SINGLE

Transistor Element Material SILICON