(2 PCS) IRF530FI MOSFET N-CH 100V 10A TO-220 ISOLATED
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THIS LISTING IS FOR (2 PCS) OF IRF530FI BY STMICRO
MOSFET N-CH 100V 10A TO-220 ISOLATED
Part #: IRF530FI
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: Power Field-Effect Transistor, 10A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer: STMicroelectronics, Inc.
Description: Power Field-Effect Transistor, 10A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mfr Package Description | TO-220, 3 PIN |
Status | Discontinued |
Avalanche Energy Rating (Eas) | 80.0 mJ |
Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (Abs) (ID) | 10.0 A |
Drain Current-Max (ID) | 10.0 A |
Drain-source On Resistance-Max | 0.16 ohm |
DS Breakdown Voltage-Min | 100.0 V |
Feedback Cap-Max (Crss) | 100.0 pF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 |
Number of Elements | 1.0 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150.0 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 35.0 W |
Power Dissipation-Max (Abs) | 40.0 W |
Pulsed Drain Current-Max (IDM) | 64.0 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 100.0 ns |
Turn-on Time-Max (ton) | 115.0 ns |