(1pc) SST39VF040904CWH Flash 4M (512Kx8) 70ns 2.7-3.6V Commercial

FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF512/010/020/040 – 2.7-3.6V for SST39VF512/010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 45 ns for SST39LF512/010/020/040 – 55 ns for SST39LF020/040 – 70 and 90 ns for SST39VF512/010/020/040 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39LF/VF020 8 seconds (typical) for SST39LF/VF040 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets

PRODUCT DESCRIPTION The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.0- 3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF512/010/020/040 and SST39VF512/010/020/ 040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, they are offered with a guaranteed typical endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improves performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles