(1PC) RD06HVF1-101 Transistor RF MOSFET N-CH 50V 3A 3-Pin(3+Tab)
Tax included.
THIS LISTING IS FOR (1PC) OF RD06HVF1-101 BY MITSUBISHI
SPECIFICATIONS
| Mfr Package Description | PACKAGE-3 |
| EU RoHS Compliant | N/A |
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| Drain Current-Max (Abs) (ID) | 3 A |
| Drain Current-Max (ID) | 3 A |
| DS Breakdown Voltage-Min | 50 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | DEPLETION MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 27.8 W |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
