(1PC) NT5CB256M8FN-DII DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin VFBGA
Tax included.
THIS LISTING IS FOR (1PC) OF NT5CB256M8FN-DII BY NANYA
SPECIFICATIONS
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Active |
| Sub Category | DRAMs |
| Access Time-Max | 0.225 ns |
| Clock Frequency-Max (fCLK) | 800.0 MHz |
| Interleaved Burst Length | 4,8 |
| I/O Type | COMMON |
| JESD-30 Code | R-PBGA-B78 |
| Memory Density | 2.147483648E9 bit |
| Memory IC Type | DDR DRAM |
| Memory Width | 8 |
| Number of Terminals | 78 |
| Number of Words | 2.68435456E8 words |
| Number of Words Code | 256M |
| Operating Temperature-Min | -40.0 Cel |
| Operating Temperature-Max | 95.0 Cel |
| Organization | 256MX8 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | FBGA |
| Package Equivalence Code | BGA78,9X13,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, FINE PITCH |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies (V) | 1.5 |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192.0 |
| Sequential Burst Length | 4,8 |
| Standby Current-Max | 0.012 Amp |
| Supply Current-Max | 0.24 Amp |
| Supply Voltage-Nom (Vsup) | 1.5 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
