(1PC) K4D26323QG-VC33 DRAM Chip GDDR SDRAM 128M-Bit 4Mx32 1.8V BGA-144
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This listing is for (1PC) of K4D26323QG-VC33 by Samsung
Status Active-Unconfirmed
Sub Category DRAMs
Access Time-Max 0.55 ns
Clock Frequency-Max (fCLK) 300.0 MHz
Interleaved Burst Length 2,4,8
I/O Type COMMON
JESD-30 Code S-PBGA-B144
Memory Density 1.34217728E8 bit
Memory IC Type GDDR1 DRAM
Memory Width 32
Number of Terminals 144
Number of Words 4194304.0 words
Number of Words Code 4M
Operating Temperature-Min 0.0 Cel
Operating Temperature-Max 65.0 Cel
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA144,12X12,32
Package Shape SQUARE
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096.0
Sequential Burst Length 2,4,8
Standby Current-Max 0.01 Amp
Supply Current-Max 0.41 Amp
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM