(1PC) IXTQ170N10P IXYS MOSFET N-CH 100V 170A TO-3P
Tax included.
THIS LISTING IS FOR (1PC) OF IXTQ170N10P BY IXYS
SPECIFICATIONS
| Mfr Package Description | TO-3P, 3 PIN |
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Active |
| Avalanche Energy Rating (Eas) | 2000.0 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 170.0 A |
| Drain Current-Max (ID) | 170.0 A |
| Drain-source On Resistance-Max | 0.009 ohm |
| DS Breakdown Voltage-Min | 100.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 715.0 W |
| Pulsed Drain Current-Max (IDM) | 350.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | PURE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Additional Feature | AVALANCHE RATED |