(1PC) IXTK22N100L IXYS MOSFET N-CH 1000V 22A TO-264

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THIS LISTING IS FOR (1PC) OF IXTK22N100L BY IXYS

SPECIFICATIONS

Mfr Package Description PLASTIC PACKAGE-3
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 1500.0 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 22.0 A
Drain Current-Max (ID) 22.0 A
Drain-source On Resistance-Max 0.6 ohm
DS Breakdown Voltage-Min 1000.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 700.0 W
Pulsed Drain Current-Max (IDM) 50.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED, UL RECOGNIZED

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