(1PC) IXFX64N60Q3 IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A

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THIS LISTING IS FOR (1PC) OF IXFX64N60Q3 BY IXYS

SPECIFICATIONS

Mfr Package Description PLASTIC, PLUS247, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 3000.0 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 64.0 A
Drain Current-Max (ID) 64.0 A
Drain-source On Resistance-Max 0.095 ohm
DS Breakdown Voltage-Min 600.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250.0 W
Pulsed Drain Current-Max (IDM) 250.0 A
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED