(1PC) IXFX32N100Q3 IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A

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THIS LISTING IS FOR (1PC) FOR IXFX32N100Q3 BY IXYS

SPECIFICATIONS

Mfr Package Description PLASTIC, PLUS247, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 32.0 A
Drain Current-Max (ID) 32.0 A
Drain-source On Resistance-Max 0.32 ohm
DS Breakdown Voltage-Min 1000.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250.0 W
Pulsed Drain Current-Max (IDM) 96.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON