(1PC) IXFN64N50P IXYS MOSFET N-CH 500V 61A SOT-227

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THIS LISTING IS FOR (1PC) OF IXFN64N50P BY IXYS

SPECIFICATIONS

Mfr Package Description PLASTIC, MINIBLOC-4
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 2500.0 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 50.0 A
Drain Current-Max (ID) 61.0 A
Drain-source On Resistance-Max 0.085 ohm
DS Breakdown Voltage-Min 500.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1.0
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625.0 W
Pulsed Drain Current-Max (IDM) 150.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED, UL RECOGNIZED