(1PC) IXFK80N50P IXYS MOSFET N-CH 500V 80A TO-264

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THIS LISTING IS FOR (1PC) OF IXFK80N50P BY IXYS

SPECIFICATIONS

Mfr Package Description TO-264, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 3500.0 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 80.0 A
Drain-source On Resistance-Max 0.065 ohm
DS Breakdown Voltage-Min 500.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200.0 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED