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(1PC) H5TQ1G83DFR-PBC Samsung DDR3 DRAM, 128MX8, CMOS, PBGA78
(1PC) H5TQ1G83DFR-PBC Samsung DDR3 DRAM, 128MX8, CMOS, PBGA78
(1PC) H5TQ1G83DFR-PBC Samsung DDR3 DRAM, 128MX8, CMOS, PBGA78

(1PC) H5TQ1G83DFR-PBC Samsung DDR3 DRAM, 128MX8, CMOS, PBGA78

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This listing is for (1PC) of H5TQ1G83DFR-PBC by Hynix

Status Discontinued
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (MHz) 800.00000
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B78
J-STD-609 Code e1
Length (mm) 11.0000
Memory Density (bits) 1073741824.0000000000000000
Memory IC Type DDR3 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 78
Number of Words (words) 134217728.0000000000000000
Number of Words Code 128M
Operating Mode SYNCHRONOUS
Operating Temperature-Max (Cel) 85.0
Operating Temperature-Min (Cel) 0.0
Memory Organization 128MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
DLA Qualification Not Qualified
Refresh Cycles 8192
Seated Height-Max (mm) 1.2000
Self Refresh YES
Sequential Burst Length 4,8
Supply Current-Max (mA) 150.000000000000000
Supply Voltage-Max (V) 1.57500
Supply Voltage-Min (V) 1.42500
Supply Voltage-Nom (V) 1.5
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch (mm) 0.800
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width (mm) 7.5000