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(1PC) DE275-201N25A RF FET Transistor, 200 V, 25 A, 590 W, 100 MHz, DE-275
(1PC) DE275-201N25A RF FET Transistor, 200 V, 25 A, 590 W, 100 MHz, DE-275
(1PC) DE275-201N25A RF FET Transistor, 200 V, 25 A, 590 W, 100 MHz, DE-275
(1PC) DE275-201N25A RF FET Transistor, 200 V, 25 A, 590 W, 100 MHz, DE-275
(1PC) DE275-201N25A RF FET Transistor, 200 V, 25 A, 590 W, 100 MHz, DE-275

(1PC) DE275-201N25A RF FET Transistor, 200 V, 25 A, 590 W, 100 MHz, DE-275

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THIS LISTING IS FOR (1PC) OF DE275-201N25A BY IXYS

SPECIFICATIONS

REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Configuration SINGLE
Drain Current-Max (Abs) (ID) 25.0 A
Drain Current-Max (ID) 25.0 A
DS Breakdown Voltage-Min 200.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F6
Number of Elements 1.0
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 590.0 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON