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(10 PCS) K4T51163QC-ZCE6 DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84
(10 PCS) K4T51163QC-ZCE6 DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84
(10 PCS) K4T51163QC-ZCE6 DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84

(10 PCS) K4T51163QC-ZCE6 DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84

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This listing is for (10 PCS) of K4T51163QC-ZCE6 by Samsung



Status Discontinued
Access Time-Max (ns) 0.4500000000000000
Clock Frequency-Max (MHz) 333.00000
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
J-STD-609 Code e1
Memory Density (bits) 536870912.0000000000000000
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Terminals 84
Number of Words (words) 33554432.0000000000000000
Number of Words Code 32M
Operating Temperature-Max (Cel) 95.0
Operating Temperature-Min (Cel) 0.0
Memory Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) 260
DLA Qualification Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max (A) 0.008000000000000
Supply Current-Max (mA) 300.000000000000000
Supply Voltage-Nom (V) 1.8
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch (mm) 0.800
Terminal Position BOTTOM