(10 PC) MTY25N60E ON SEMI POWER MOSFET 25 AMPS, 600 VOLTS, N-CHANNEL, TO-264
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THIS LISTING IS FOR (10 PC) OF MTY25N60E BY ON SEMICONDUCTOR
POWER MOSFET 25 AMPS, 600 VOLTS, N-CHANNEL, TO-264
Manufacturer: ON Semiconductor L.L.C.
Description: 25A, 600V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOSFET 25 AMPS, 600 VOLTS, N-CHANNEL, TO-264
Part #: MTY25N60E
Part Category: TransistorsManufacturer: ON Semiconductor L.L.C.
Description: 25A, 600V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Product Description
OBSOLETE - This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced Power MOSFET
is designed to withstand high energy in the avalanche and commutation
modes. Designed for high voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
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| Mfr Package Description | CASE 340G-02, 3 PIN |
| Status | Discontinued |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 25 A |
| Drain Current-Max (ID) | 25 A |
| Drain-source On Resistance-Max | 0.2100 ohm |
| DS Breakdown Voltage-Min | 600 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-264AA |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300 W |
| Pulsed Drain Current-Max (IDM) | 65 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Additional Feature | HIGH VOLTAGE |
