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(1) RFL1N18L Power Field-Effect Transistor 1A 180V 1-Element N-Channel TO-205AF
(1) RFL1N18L Power Field-Effect Transistor 1A 180V 1-Element N-Channel TO-205AF
(1) RFL1N18L Power Field-Effect Transistor 1A 180V 1-Element N-Channel TO-205AF

(1) RFL1N18L Power Field-Effect Transistor 1A 180V 1-Element N-Channel TO-205AF

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THIS LISTING IS FOR (1 PC) OF RFL1N18L BY HARRIS
Power Field-Effect Transistor 1A 180V 1-Element N-Channel TO-205AF

Part #: RFL1N18L

Part Category: Transistors
Manufacturer: Harris Corporation
Description: Small Signal Field-Effect Transistor, 1A I(D), 180V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF



Status Discontinued
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 1.0  A
Drain Current-Max (ID) 1.0  A
Drain-source On Resistance-Max 3.65  ohm
DS Breakdown Voltage-Min 180.0  V
Feedback Cap-Max (Crss) 35.0  pF
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 8.33  W
Power Dissipation-Max (Abs) 8.3  W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature LOGIC LEVEL COMPATIBLE