(1 PC) JANTX2N6786 Power Field-Effect Transistor 1.25A 400V 4.15ohm TO-39

Part #: JANTX2N6786

Part Category: Transistors

Manufacturer: International Rectifier

Description: Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Mfr Package Description HERMETIC SEALED, TO-39, 3 PIN

Status Transferred

Avalanche Energy Rating (Eas) 0.82  mJ

Configuration SINGLE WITH BUILT-IN DIODE

Drain Current-Max (ID) 1.25  A

Drain-source On Resistance-Max 4.15  ohm

DS Breakdown Voltage-Min 400.0  V

FET Technology METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code TO-205AF

JESD-30 Code O-MBCY-W3

Number of Elements 1.0

Number of Terminals 3

Operating Mode ENHANCEMENT MODE

Package Body Material METAL

Package Shape ROUND

Package Style CYLINDRICAL

Peak Reflow Temperature (Cel) NOT SPECIFIED

Polarity/Channel Type N-CHANNEL

Pulsed Drain Current-Max (IDM) 5.5  A

Qualification Status Not Qualified

Reference Standard MIL-19500/556

Surface Mount NO

Terminal Form WIRE

Terminal Position BOTTOM

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Transistor Application SWITCHING

Transistor Element Material SILICON

Additional Feature AVALANCHE RATED