(1 PC) JAN2N697 CRP Trans GP BJT NPN 40V 3-Pin TO-5

$85.00
Unit price per

Tax included.

THIS LISTING IS FOR (1 PC) OF JAN2N697
Trans GP BJT NPN 40V 3-Pin TO-5
TECHNICAL DATA
NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/99
Devices Qualified Level
2N696
2N696S
2N697
2N697S
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2) PT
0.6
2.0
W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RqJC 0.075 0C/mW
1) Derate linearly 4.0 mW/0C for TA > 250C
2) Derate linearly 13.3 mW/0C for TC > 250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
RBE = 10 W, IC = 100 mAdc
V(BR)CER 40
Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 30 Vdc
ICBO 10
0.1
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO 10
mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc 2N696,s
2N697,s
IC = 500 mAdc, VCE = 10 Vdc 2N696,s
2N697,s
hFE
20
40
12.5
20.0
60
120
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VCE(sat) 0.3 1.5
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VBE(sat) 1.3
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-5*
JAN