(1 PC) HWL27YRA HEXAWAVE Medium Power GaAs FET
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THIS IS FOR (1 PC) OF HWL27YRA BY HEXAWAVE
Medium Power GaAs FET
Description
The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Sto
Features
Low Cost GaAs Power FET.
Class A or Class AB Operation.
Greater than 17 dB Gain.
5V to 10V Operation.
Key Features and Specifications (Typical)
Part Type: L-Band GaAs Power FET (Gallium Arsenide Field-Effect Transistor).
Manufacturer: Hexawave, Inc..
Package Type: Ceramic RA Package.
Operating Frequency: Designed for L-Band applications;
RF tests are typically conducted at 2400 MHz.
Electrical Specifications (at T\u221a=25\u00b0C, f=2400 MHz):\(I_{DSS}\)
(Saturated Current): The datasheet will specify minimum, typical, and maximum values for this parameter.Voltage:
The component is designed for specific drain-source voltages (\(V_{DS}\)).
Power Output: Specifies the power characteristics (e.g., gain, output power at 1 dB compression point, P1dB).
