(5 PCS) IRFS530 SAMSUNG 9.7A 100V 0.16ohm N-CHANNEL Si POWER MOSFET TO-220
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THIS LISTING IS FOR (5 PCS) OF IRFS530 BY SAMSUNG
IRFS530 SAMSUNG 9.7A 100V 0.16ohm N-CHANNEL Si POWER MOSFET TO-220
Manufacturer: Samsung Semiconductor Division
Description: 9.7A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
IRFS530 SAMSUNG 9.7A 100V 0.16ohm N-CHANNEL Si POWER MOSFET TO-220
Part #: IRFS530
Part Category: TransistorsManufacturer: Samsung Semiconductor Division
Description: 9.7A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
| Mfr Package Description | TO-220, 3 PIN |
| Status | Transferred |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| Drain Current-Max (Abs) (ID) | 9.7 A |
| Drain Current-Max (ID) | 9.7 A |
| Drain-source On Resistance-Max | 0.1600 ohm |
| DS Breakdown Voltage-Min | 100 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 35 W |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
