(5 PCS) CA3018 RCA (EQUIVALENT TO NTE904) IC GEN PURP TRANSISTOR ARRAY
Tax included.
THIS LISTING IS FOR (5 PCS) CA3018 RCA
IC GEN PURP TRANSISTOR ARRAY
NTE904
Integrated Circuit
General Purpose Transistor Array
(Two Isolated Transistors and a Darlington
Connected Transistor Pair)
Description:
The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate
in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate terminal for maximum flexibility.
The transistors of the NTE904 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits but
in addition they provide the advantages of close electrical and thermal matching inherent in integrated
circuit construction.
Features:
Matched Monolithic General Purpose Transistors
Current Gain Matched to ±10%
Base−Emitter Voltage Matched to ±2mV
Operation from DC to 120MHz
Wide Operating Current Range
Low Noise Figure
Applications:
General use in Signal Processing Systems in DC through VHF Range
Custom Designed Differential Amplifiers
Temperature Compenstaed Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage (Each Transistor), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector−Base Voltage (Each Transistor), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector−Substrate Voltage (Each Transistor, Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter−Base Voltage (Each Transistor), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (Each Transistor), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, PD
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Derate Above 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate
(Pin10) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
IC GEN PURP TRANSISTOR ARRAY
NTE904
Integrated Circuit
General Purpose Transistor Array
(Two Isolated Transistors and a Darlington
Connected Transistor Pair)
Description:
The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate
in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate terminal for maximum flexibility.
The transistors of the NTE904 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits but
in addition they provide the advantages of close electrical and thermal matching inherent in integrated
circuit construction.
Features:
Matched Monolithic General Purpose Transistors
Current Gain Matched to ±10%
Base−Emitter Voltage Matched to ±2mV
Operation from DC to 120MHz
Wide Operating Current Range
Low Noise Figure
Applications:
General use in Signal Processing Systems in DC through VHF Range
Custom Designed Differential Amplifiers
Temperature Compenstaed Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage (Each Transistor), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector−Base Voltage (Each Transistor), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector−Substrate Voltage (Each Transistor, Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter−Base Voltage (Each Transistor), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (Each Transistor), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, PD
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Derate Above 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate
(Pin10) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
