|
Product Category: |
MOSFET |
|
|
Manufacturer: |
NXP |
|
|
RoHS: |
YES |
|
|
Technology: |
Si |
|
|
Mounting Style: |
Through Hole |
|
|
Package / Case: |
TO-220-3 |
|
|
Number of Channels: |
1 Channel |
|
|
Transistor Polarity: |
N-Channel |
|
|
Vds - Drain-Source Breakdown Voltage: |
30 V |
|
|
Id - Continuous Drain Current: |
43.4 A |
|
|
Rds On - Drain-Source Resistance: |
40 mOhms |
|
|
Vgs - Gate-Source Voltage: |
20 V |
|
|
Vgs th - Gate-Source Threshold Voltage: |
2.2 V |
|
|
Qg - Gate Charge: |
18.5 nC |
|
|
Maximum Operating Temperature: |
+ 175 C |
|
|
Packaging: |
Reel |
|
|
Channel Mode: |
Enhancement |
|
|
Brand: |
NXP Semiconductors |
|
|
Configuration: |
Single |
|
|
Fall Time: |
19 ns |
|
|
Height: |
9.4 mm |
|
|
Length: |
10.3 mm |
|
|
Minimum Operating Temperature: |
- 55 C |
|
|
Pd - Power Dissipation: |
57.6 W |
|
|
Rise Time: |
10 ns |
|
|
|
|
|
Transistor Type: |
1 N-Channel |
|
|
Type: |
N-Channel TrenchMOS Logic Level FET |
|
|
Typical Turn-Off Delay Time: |
33 ns |
|
|
Typical Turn-On Delay Time: |
6 ns |
|
|
Width: |
4.7 mm |
|
|
Unit Weight: |
0.211644 oz |
|
