(25 PCS) GT15J311 Toshiba Insulated Gate Bipolar Transistor, 15A 600V N-Channel
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THIS LISTING IS FOR (25 PCS) OF GT15J311 BY Toshiba
Insulated Gate Bipolar Transistor, 15A 600V N-Channel
Mfr Package Description, 2-10S1C, 3 PIN
Status EOL
Case Connection COLLECTOR
Collector Current-Max (IC) 15.0 A
Collector-emitter Voltage-Max 600.0 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 300.0 ns
Gate-emitter Voltage-Max 20.0 V
JESD-30 Code R-PSIP-T3
Number of Elements 1.0
Number of Terminals 3
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70.0 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 500.0 ns
Turn-on Time-Nom (ton) 400.0 ns
Additional Feature HIGH SPEED