(2) SUB85N02-03-E3 VISHAY Power Field-Effect Transistor 85A 20V 0.0038ohm TO-263
Tax included.
THIS IS FOR (2 PCS) SUB85N02-03-E3 VISHAY Power Field-Effect Transistor 85A 20V 0.0038ohm TO-263
Part #: SUB85N02-03-E3
Obsolete
Part Category: Power Field-Effect Transistors
Manufacturer: VISHAY SILICONIX
Description: Power Field-Effect Transistor, 85A I(D), 20V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Status Discontinued
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min (V) 20.0000000000000000
Drain Current-Max (ID) (A) 85.0000000000000000
Drain-source On Resistance-Max (ohm) 0.0038000000000000
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
J-STD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) (A) 240.0000000000000000
DLA Qualification Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
