(2 PCS) SD5401CY Power FET 0.05A N-Channel, Metal-oxide Semiconductor
Tax included.
THIS IS FOR (2 PCS) OF SD5401CY BY VISHAY SILICONIX
Power FET 0.05A N-Channel, Metal-oxide Semiconductor
Mfr Package Description SOIC-14
REACH Compliant Yes
Configuration COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 0.05 A
Drain Current-Max (ID) 0.05 A
Drain-source On Resistance-Max 70.0 ohm
DS Breakdown Voltage-Min 10.0 V
Feedback Cap-Max (Crss) 0.5 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G14
Number of Elements 4.0
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 85.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature LOW INSERTION LOSS