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(2 PCS) IRFBE30PBF SILICONIX MOSFET N-CH 800V 4.1A TO-220AB ROHS
(2 PCS) IRFBE30PBF SILICONIX MOSFET N-CH 800V 4.1A TO-220AB ROHS
(2 PCS) IRFBE30PBF SILICONIX MOSFET N-CH 800V 4.1A TO-220AB ROHS

(2 PCS) IRFBE30PBF SILICONIX MOSFET N-CH 800V 4.1A TO-220AB ROHS

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THIS IS FOR (2 PCS) OF IRFBE30PBF BY SILICONIX
MOSFET N-CH 800V 4.1A TO-220AB ROHS

Manufacturer: Vishay
Product Category: MOSFET
RoHS:  YES
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 4.1 A
Rds On - Drain-Source Resistance: 3 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 78 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode: Enhancement
Series: IRFBE
Packaging: Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 30 ns
Height: 15.49 mm
Length: 10.41 mm
Product Type: MOSFET
Rise Time: 33 ns
1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 12 ns
Width: 4.7 mm
Part # Aliases: IRFBE30PBF-BE3
Unit Weight: 0.068784 oz