(2 PCS) IRFB5620PBF INFINEON MOSFET N-CH 200V 25A TO220AB ROHS
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THIS IS FOR (2 PCS) OF IRFB5620PBF BY INFINEON
MOSFET N-CH 200V 25A TO220AB ROHS
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Y
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 25 A
Rds On - Drain-Source Resistance: 72.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 25 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 144 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Fall Time: 9.9 ns
Forward Transconductance - Min: 37 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 14.6 ns
1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 17.1 ns
Typical Turn-On Delay Time: 8.6 ns
Width: 4.4 mm
Part # Aliases: IRFB5620PBF SP001565852
Unit Weight: 0.068784 oz