(2 PCS) BUK455-100B PowerMOS FET transistor 23A 100V 0.1ohm TO-220AB

Part #: BUK455-100B

Part Category: Transistors

Manufacturer: NXP

Description: Power Field-Effect Transistor, 23A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-22

Mfr Package Description PLASTIC, TO-220AB, 3 PIN

Status Discontinued

Avalanche Energy Rating (Eas) 100.0  mJ

Case Connection DRAIN

Configuration SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) 23.0  A

Drain Current-Max (ID) 23.0  A

Drain-source On Resistance-Max 0.1  ohm

DS Breakdown Voltage-Min 100.0  V

Feedback Cap-Max (Crss) 150.0  pF

FET Technology METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code TO-220AB

JESD-30 Code R-PSFM-T3

Number of Elements 1.0

Number of Terminals 3

Operating Mode ENHANCEMENT MODE

Operating Temperature-Max 175.0  Cel

Package Body Material PLASTIC/EPOXY

Package Shape RECTANGULAR

Package Style FLANGE MOUNT

Polarity/Channel Type N-CHANNEL

Power Dissipation Ambient-Max 125.0  W

Power Dissipation-Max (Abs) 125.0  W

Pulsed Drain Current-Max (IDM) 92.0  A

Qualification Status Not Qualified

Sub Category FET General Purpose Powers

Surface Mount NO

Terminal Form THROUGH-HOLE

Terminal Position SINGLE

Transistor Application SWITCHING

Transistor Element Material SILICON

Turn-off Time-Max (toff) 240.0  ns

Turn-on Time-Max (ton) 70.0  ns