(1PC) IXFN64N50P IXYS MOSFET N-CH 500V 61A SOT-227
Tax included.
THIS LISTING IS FOR (1PC) OF IXFN64N50P BY IXYS
SPECIFICATIONS
Mfr Package Description | PLASTIC, MINIBLOC-4 |
REACH Compliant | Yes |
EU RoHS Compliant | Yes |
Status | Active |
Avalanche Energy Rating (Eas) | 2500.0 mJ |
Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (Abs) (ID) | 50.0 A |
Drain Current-Max (ID) | 61.0 A |
Drain-source On Resistance-Max | 0.085 ohm |
DS Breakdown Voltage-Min | 500.0 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PUFM-X4 |
Number of Elements | 1.0 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150.0 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 625.0 W |
Pulsed Drain Current-Max (IDM) | 150.0 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | NICKEL |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Additional Feature | AVALANCHE RATED, UL RECOGNIZED |
