(10PCS) MJD45H11T4 ON SEMI Bipolar Transistors - BJT 8A 80V 20W PNP, D-PAK
Tax included.
THIS LISTING IS FOR (10PCS) OF MJD45H11T4 BY ON SEMICONDUCTOR
SPECIFICATIONS
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Active |
| Collector Current-Max (IC) | 8.0 A |
| Collector-emitter Voltage-Max | 80.0 V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 40.0 |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1.0 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | PNP |
| Power Dissipation Ambient-Max | 20.0 W |
| Power Dissipation-Max (Abs) | 20.0 W |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 40.0 MHz |
| VCEsat-Max | 1.0 V |
