(10pcs) IRFD110 N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVM
Tax included.
This listing is for (10PCS) of IRFD110 by International Rectifier
Mfr Package Description HD-1, DIP-4
REACH Compliant Yes
Status Transferred
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 1.0 A
Drain Current-Max (ID) 1.0 A
Drain-source On Resistance-Max 0.54 ohm
DS Breakdown Voltage-Min 100.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.0 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED